Abstract
Antimony-doped tin oxide (SnO2:Sb) thin films were prepared by atmospheric pressure chemical vapor deposition. Precursors were mixed with gaseous SnCl4, SbCl5, and oxygen. Both antimony and chlorine ions became involved in doping and reduced resistivity. The figure of merit suggested that films deposited at 500 °C with the ratio of SnCl4/SbCl5 equals to 0.5 have the best quality. The dopant in the degenerate films narrowed the bandgap because of interaction between electrons and impurities. A mathematical model of the shifting in bandgap is proposed with the consideration of the effective mass of the carriers and well fitted to the experimental results.
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