Abstract
The bandgap evolution of GaN1−x As x in the whole composition range is investigated and a model describing its bandgap energy is developed. It is found that the bandgap evolution is due to two factors. One is the interaction between the impurity band and the Γ conduction band or the Γ valence band of the host materials. The other one is the intraband coupling within the conduction band and separately within the valence band. The former is dominant in the As-rich GaNAs and the N-rich GaNAs. The latter plays an important part in the N-rich range and the moderate composition range.
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