Abstract
Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.
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