Bandgap engineering of CdTe/CdSe rod-shaped core/shell and CdTeSe ellipsoidal alloy quantum dots with tunable and intense emission

Abstract

In this work, core CdTe, core-shell CdTe/CdSe and alloy CdTeSe QDs are synthesized by aqueous solvent. TEM visually shows the rod-shaped core-shell structure with a transverse to longitudinal ratio of 6.5 and the ellipsoidal alloy structure with different crystal planes competing for growth. The XRD and Raman spectra of the three QDs illustrate the characteristics of the internal lattice structure. With the increase of reaction time, CdTe emission maximum (EM) shows a red shift of 84 nm. Stokes shift changes little, and full width half maximum (FWHM) increases slightly. Compared with the CdTe, the red shift of CdTe/CdSe EM is slowly first and then faster, with a total shift of 125 nm. Stokes shift increases obviously. The initial FWHM is larger than CdTe and the widening speed is gradually accelerated. The initial EM of CdTeSe is red shifted compared with CdTe, and the total red shift of EM is 72 nm. Stokes shift increases obviously. The initial FWHM is significantly wider than CdTe. FWHM first decreases and then increases with reaction time. CdTe shows obvious band edge exciton absorbance of photoluminescence excitation (PLE) spectrum between 356 nm and 400 nm. CdTe/CdSe shows double band edge exciton absorption at 354–373 nm and 401–436 nm due to wave function separated of core-shell structure. The PLE spectrum of CdTeSe shows an obvious upward trend at 306–373 nm due to high energy level nonradiation. The average lifetime of CdTe/CdSe increases by 53 ns compared with CdTe due to the spatially separated electrons and holes. The defect state of CdTeSe increases the proportion of fast delay, which is 2 ns shorter than the average lifetime of CdTe. The transition mechanism of core-shell indirect band gap and alloy direct band gap is explained according to the valence bands of each element shown by XPS and the simulation of energy band density of states. The thickness shell and the doping elements can be adjusted to provide rich variation in the optical properties. This provides a more definite direction for the applications of cadmium chalcogenide in the fields of photoelectric devices and biology. • Type I and type II transformation through Rod-shaped core/shell and ellipsoidal alloy QDs. • Tunable emission achieved by adjusting morphology, lattice structure and valence bond connection. • Precise and rich regulation of band gap engineering. • Providing a more definite direction for the applications of cadmium chalcogenide QDs.