Abstract
Bandgap engineering plays a vital role in the optoelectronic application of semiconducting material. In this work, Graphitic carbon nitride (g-C3N4) nanoparticles are synthesized by pyrolyzing different precursors and the role of precursor on the reduction bandgap is analyzed. X-ray diffraction pattern confirms the presence of tri-s-triazine units. Fourier transform infrared spectroscopy result reveals the presence of carbon nitride heterocycle. Urea with glycine derived g-C3N4 (UG) shows a layered structure. The absorption band edge of 620 nm and reduction in bandgap of 2.35 eV is observed for UG sample. The addition of glycine in urea significantly reduces the optical band gap and thus wider the light absorption range. Photoluminescence measurement reveals the presence of n- π* transition and defect induced luminescence. The quenching of photoluminescence intensity is observed for UG sample and the glycine produces additional NH moieties, which create disorder in the g-C3N4 structure. Reduction in bandgap with lower recombination rate significantly improves light harvesting ability and photocatalytic performance of g-C3N4 material.
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