Abstract
In order to balance the contradiction between on and off performances of the Schottky diodes, Si-doped β-(AlxGa1−x)2O3 (β-AlGaO) single crystals were designed based on the bandgap and impurity engineering of β-Ga2O3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.