Bandgap engineering and quantum wells in optoelectronic devices

Abstract

Integrated optoelectronic devices are becoming more important as the demand for low-cost devices for sophisticated applications increases. The paper reviews the techniques of bandgap engineering which can be used to control the characteristics of integrated optoelectronic devices fabricated with III-V semiconductors. In particular, the use of quantum wells as active and passive elements in devices such as waveguides, modulators, lasers, and photodiodes is addressed. The flexibility of the performance obtained through the use of quantum wells is emphasised. Linear and nonlinear optical properties as well as the quantum confined Stark effect are discussed. The potential applications and fabrication techniques of lower dimensional semiconductor structures, such as quantum wires, are also described.