Abstract
Two issues are addressed: (i) X-ray spectroscopic studies of RPD-SiO2 and RPD GeO2, include band edge states and pre-existing defects, each in the OK edge spectrum, and (ii) interpretation of these X-ray absorption spectroscopy to identify band edge states and intrinsic defects. (iii) These provide a basis for interpretation of electrical data associated with band edge electrically active singlet state defects.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
