Abstract
This paper presents a band-to-band tunneling (BTBT) diode for use in ultralow-voltage (ULV) applications. The BTBT diode is shown to have nearly zero turn-on voltage, because it does not operate using diffusion current like a typical p-n junction diode. A simple analytical model was developed to better understand the BTBT diode and to help optimize the design. Simulations were designed and implemented in Silvaco ATLAS to accurately define the BTBT diode. The current-density versus voltage characteristics from the simulations were found to have large on/off current ratio, demonstrating that the BTBT diode has potential applications for circuits utilizing ULVs.
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