Abstract
The correlations between the defect density, N D, Fermi energy, E F, and Urbach tail, E O, are examined for rf-sputtered a-Ge:H films p-type doped by aluminum, gallium and indium. Photothermal deflection spectroscopy was used for the determination of N D and E O, while E F was deduced from conductivity measurements. The present data show different dependence of N D on E F for samples doped by different dopants, but a similar behavior when N D is plotted as a function of E O or the solid-state dopant impurity concentration. The simple equilibrium model of doping alone is unable to explain the present results. The data suggest that the doping-induced defects observed are related to the large fraction of neutral dopant impurities expected to be present in the material.
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