Abstract
The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30×30 k×p model including the d far-level contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. The method also provides a good description of the second conduction band which is useful for transport modeling. Finally, our results show that Luttinger parameters, the κ valence band parameter, and the effective masses in the X and L valleys are in good agreement with available experimental data.
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