Abstract
Pseudopotential form factors and band structures are determined for 14 semiconductors of the diamond and zincblende structures: AlSb, CdTe, GaAs, GaP, GaSb, Ge, InAs, InP, InSb, Si, Sn, ZnS, ZnSe, and ZnTe. Experimental values of the splitting of energy levels in the crystal are used. The form factors appear to be accurate to 0.01 Ry and yield energy bands which agree with experiment to within \ensuremath{\sim}0.01 Ry near the band gap and \ensuremath{\sim}0.04 Ry over a range of 1 Ry. For some of these substances these are the first band structures to be calculated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
