Abstract
Band Structure Engineering of WSe2 Homo-Junction Interfaces In article number 2101763, June-Chul Shin, Gwan-Hyoung Lee, and co-workers demonstrate that vertical homo-junction consisting of two WSe2 flakes with different thicknesses shows anti-ambipolar transport behavior due to a thickness-induced band offset at the interface. The anti-ambipolar transport is due to tunneling-mediated interlayer recombination of the majority carriers of electrons in few-layer WSe2 and holes in monolayer WSe2.
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