Abstract

In present work, our research is mainly focused on the electronic structures, optical and magnetic properties of Cu2FeSnZ4 (Z = S, Se) compounds by using ab initio calculations within the generalized gradient approximation (GGA). The calculations are performed by using the Vienna ab-initio simulation package (VASP) based on the density functional theory. The band structure of the Cu2FeSnZ4 ( Z = S, Se) compounds for majority spin (spin-up) and minority spin (spin-down) were calculated. It is seen that for these compounds, the majority spin states cross the Fermi level and thus have the metallic character, while the minority spin states open the band gaps around the Fermi level and thus have the narrow-band semiconducting nature. For better understanding of the electronic states, the total and partial density of states were calculated, too. The real and imaginary parts of dielectric functions and hence the optical functions such as energy-loss function, the effective number of valance electrons and the effective optical dielectric constant for Cu2FeSnZ4 (Z = S, Se) compounds were also calculated.

Highlights

  • Along the progress of growing high-quality complex compounds, the group I2-II-IV-VI4 quaternary semiconductors have rapidly been broad interest due to many possibilities in varying the chemical composition, and thereby optimizing the material functionality

  • Calculation methodology The first principles calculation based on DFT was used with the aid of the Vienna ab-initio simulation package (VASP) [8,9,10] program

  • The exchange and correlation potentials were Perdew-Burke-Ernzerhof method [11] based on generalized gradient approximation (GGA)

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Summary

Introduction

Along the progress of growing high-quality complex compounds, the group I2-II-IV-VI4 quaternary semiconductors have rapidly been broad interest due to many possibilities in varying the chemical composition, and thereby optimizing the material functionality. Cupper based kesterite materials (Cu2XYZ4, X=Zn, Fe, Y=Sn, Ge, Z=S, Se, Te) have recently found increased interest as absorber layer in thin film solar cells technologies and devices [1]. The band gap energy of Cu2XYZ4are suitable for photovoltaics, and Cu2XYZ4 have the advantage over corresponding CuIn(Ga)Se2 absorbers to involve abundant, nontoxic, and less expensive chemical elements. Cu2ZnSnS4 based solar cells have recently achieved solar energy conversion efficiency of 12.6%.

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