Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

Abstract

We have calculated the band structure of compressively strained InGaAsN/GaAs(P)/GaAs quantum wells emitting at 1.3 µm using the band anticrossing model and a 8 band k · p Hamiltonian. From the structural point of view, GaAsP barriers under tensile strain offer the possibility of partly balancing the compressive strain in InGaAsN MQW structures. From the electronic properties point of view, these barriers yield a better carrier confinement due to GaAsP large band gap. This results in an increase of the material gain of nearly 50% which can be explained by the reduction of the hole leakage in these structures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)