Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

Abstract

The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k/spl middot/p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.