Abstract
The Klauder self-energy method is used to calculate the effects of the one-body interactions among the dopant ions and the carriers in heavily doped silicon at 300 K. The many-body interactions of exchange and correlation are estimated by interpreting optical absorption measurements and by calculations based on degenerate theory. When densities exceed 5×1019 cm−3, one-body and many-body terms become of the same order of magnitude and should be included in calculations of band structure changes and of properties such as carrier transport which depend on the density of states.
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