Abstract
Double-layer Au-(n)AlGaAs-(n)GaAs Schottky-barrier devices were examined. The interaction of the closely spaced Au-AlGaAs Schottky barrier and the AlGaAs-GaAs heterojunction was found to produce a novel phenomenon termed band readjustment. This effect is applied to the design of high-efficiency solar cells. Three criteria are presented by which the open-circuit voltage and the short-circuit current of the solar cells can be improved separately. Current transport through the potential barrier, located within the heterojunction depletion region, is also discussed.
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