Abstract
We have made a systematic investigation of the band diagram calculation of strained and unstrained InxGa1 − xAs alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of InxGa1 − xAs/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained InxGa1 − xAs/GaAs system. The κ valence band parameter as well as g* Landé factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
