Abstract
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique. The structural, optical, dielectric and photoelectric properties of InSe/Sb2Te3 heterojunctions are explored by X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The structural analyses revealed the preferred growth of polycrystalline hexagonal Sb2Te3 onto amorphous InSe as a major phase. Optically, the coating of Sb2Te3 onto InSe enhanced the light absorbability of InSe by more than 18 times, redshifts the energy band gap, increased the dielectric constant by ~5 times and increased the optical conductivity by 35 times in the NIR range of light. A conduction and valance band offsets of 0.40 and 0.68 eV are determined for the InSe/Sb2Te3 heterojunction devices. In addition, the Drude-Lorentz fittings of the optical conductivity indicated a remarkable increase in the plasmon frequency values upon depositing of Sb2Te3 onto InSe. The illumination intensity and time dependent photocurrent measurements resulted in an enhancement in the photocurrent values by one order of magnitude. The response time of the devices is sufficiently short to nominate the InSe/Sb2Te3 heterojunction devices as fast responding NIR sensors suitable for optoelectronic applications.
Highlights
One of the famous research sectors which are popular in the current century is the design of new classes of semiconducting materials that suits many optoelectronic applications
Sb2Te3 thin films which are coated onto glass substrates displayed intensive peaks at various diffraction angles
We have shown that the formation of InSe/Sb2Te3 bilayers results in remarkable enhancements in optoelectronic properties of the InSe layers
Summary
One of the famous research sectors which are popular in the current century is the design of new classes of semiconducting materials that suits many optoelectronic applications These semiconductor groups include organic/ inorganic[1], metal-(double) oxides[2,3,4] layers and mixed metaloxide nanoparticles[5]. Co-Al oxides are reported promising alternative materials for improving the power conversion efficiency of solar cells and for obtaining clean and renewable energy[4] Another interesting material is antimony telluride in thin films forms which attracted the attention of research society owing to their wide range of applications. They can exhibit different characteristics that depend on the substrates they grow onto. The light intensity and time dependencies of the photocurrent are considered
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