Abstract
The band offsets for the β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(Al0.21Ga0.79)2O3 films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of β-(Al0.21Ga0.79)2O3 was determined by optical transmission to be 4.69 ± 0.03 eV with a direct transition of 5.37 ± 0.03 eV, while β-Ga2O3 was confirmed to have an indirect band gap of 4.52 ± 0.03 eV with a direct transition of 4.94 ± 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of β-(Al0.21Ga0.79)2O3 being -0.26 ± 0.08 and 0.43 ± 0.08 eV, respectively, above those of β-Ga2O3 (010). These values can now be used to help better design and predict the performance of β-(AlxGa1-x)2O3 heterojunction-based devices.
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