Abstract
InN is a promising candidate as a channel material for high-frequency field effect transistors. It is of high interest therefore to explore the high K gate dielectric material for InN-based metal-insulator-semiconductor field-effect transistors in the miniaturization of electronic components. The stability and band offsets are studied using first-principles calculations for La2O3/InN heterostructures. Adsorbed La atoms preferentially occupy T4 sites, whereas oxygen atoms preferentially adsorb at H3 sites of the InN (0001) surface for different coverages. The band offsets, electronic density of states, and atomic charges are analyzed for the La2O3/InN heterojunctions. Our calculations predict the band offsets at the La/In interface are suitable for the design of metal insulator semiconductor devices.
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