Abstract
The values of band offsets in heterojunctions of In 0.15Ga 0.85As y Sb 1−y Al 0.5Ga 0.5As z Sb 1−z and In 0.85Ga 0.15As y Sb 1−y Al 0.5Ga 0.5As z Sb 1−z with both quaternaries lattice-matched to GaSb, have been measured by capacitance-voltage studies. The conduction band offsets are, respectively, 0.75–0.77 and 1.25 eV, with the valence band offsets of −(0.0–0.02) and −0.15 eV. It is shown that the transitivity rule is observed and that there is correlation of the valence band offsets with the difference in the Schottky barrier heights of corresponding materials.
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