Abstract
X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the valence band (ΔEV) and conduction band (ΔEC) of various dielectric/IGZO heterostructures. ΔEV values of 0.48{plus minus}0.025 eV for HfO2/IGZO, 0.44{plus minus}0.21 eV for Y2O3/IGZO, 0.81{plus minus}0.17 eV for MgO/IGZO, 0.95{plus minus}0.17 eV for the Al2O3/IGZO, and 1.43{plus minus}0.15 eV for the SiO2/IGZO heterojunctions were obtained, respectively. The bandgap differences between these dielectrics and IGZO would lead to corresponding conduction band offset (ΔEC) values of 2.39-4.74 eV. These results are important for designing structures with good carrier confinement in transparent thin film transistors based on IGZO.
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