Abstract
A Hartree-Fock model for impurity bands is used to obtain a simple, approximate correction to the free electron model which is almost universally used in treatments of doped contact layers in quantum well, heterojunction and modulation doped devices. The operation of such devices depends critically on band offsets and Fermi levels. The model incorporates exchange interactions as well as screening and it is analytically solvable. The results are cast in such a form as to facilitate use in modeling the effect of contact layers in the aforesaid devices. Numerical results for shallow dopant band offsets in GaAs are found to be about 10%–25% of the Fermi energy.
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