Abstract
We analyze the band offsets at Ge/GaAs (100) interfaces by internal photoemission, capacitance/voltage and current/voltage measurements. The conduction band offset varies with Ge growth temperature from −0.025 eV for 300 °C to 0.33 eV for 500 °C. We attribute these drastic offset variations to different microscopic interface configurations at the polar Ge/GaAs (100) heterojunction.
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