Abstract
The band offsets for strained Si1-x-yGexCy layers grown on Si(001) substrate and for strained Si1-xGex layers grown on fully relaxed Si1-zGez virtual substrates are estimated. The hydrostatic strain, theuniaxial strain and the intrinsic chemical effect of Ge and C areconsidered separately. Unknown material parameters relative to the lattereffect are chosen to give the best agreement with the availableexperimental results for Si1-xGex and Si1-yCy layers on Si. As a general trend concerning carrier confinementopportunities, it is found that a compressive strain is required to obtaina sizeable valence band offset, while a tensile strain is needed to obtain aconduction band discontinuity. In most cases the strain is responsible fora bandgap narrowing with respect to that of the substrate. The obtainedresults are in very good agreement with available experimentaldeterminations of band offsets and bandgap changes for ternary alloys onSi(001).
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