Abstract
μc-Si : H/a-Si : H multilayers have been fabricated with an rf glow-discharge method in which two coupling types of rf electrodes were used independently by turns without altering the composition of the reactive gases. This specific design is regarded as a kind of microstructure-modulated superlattice. The valence band offset at the μc-Si : H/a-Si : H interface is determined by X-ray photoelectron spectroscopy (XPS). The temperature dependence of the longitudinal dark conductivity in μc-Si : H/a-Si : H superlattices has been studied and a resonant tunneling effect observed. Large Persistent photoconductivity (PPC) was detected and its time dependence obtained. Finally, the above experimental results are discussed.
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