Abstract
The band offset parameter Qc≡ΔEc/ΔEg for both GaAs/AlGaAs, and GaInAs/AlInAs (lattice matched to InP) was extracted from electron beam electroreflectance interband transition energies obtained from molecular-beam epitaxially grown parabolically and triangularly shaped quantum wells (QWs). Most of the QWs were grown using continuous analog grading. Additionally, for comparison, two 500 Å GaAs/AlGaAs, superlattice (digitally) graded, parabolic QWs, with bilayer thicknesses of 25 and 12.5 Å, were also evaluated. Qc values obtained were 0.661±0.015 and 0.650±0.005 for GaAs/AlGaAs and GaInAs/AlInAs, respectively. Measurements also revealed that Qc was both temperature and concentration independent.
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