Abstract
The electronic structure of graphene on SiO2 was investigated by near-edge X-ray absorption fine structure (NEXAFS) and X-ray emission spectroscopy (XES). The angle-dependent NEXAFS spectra of graphene show strong dichroism, indicating the relatively high alignment ordering of graphene on SiO2. The resonant XES spectral shape exhibits strong dependence on the excitation energy because of the conservation of k momentum during the resonant inelastic X-ray scattering (RIXS) process. Additionally, quantitative banding mapping of graphene on SiO2 is enabled based on the k-momentum selectivity. The experimental results show good agreement with the theoretical calculations, indicating that SiO2-supported graphene preserves the intrinsic electronic properties of free-standing graphene.
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