Abstract
A comprehensive study of the band alignments of TixAl1−xOy (with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1−xOy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry. The permittivity, k, has been found to be enhanced from ∼10 for 9% Ti in TixAl1−xOy to 76 for TiO2, however TiO2 brings an unfavorable band alignment and a small conduction band offset (<0.1 eV) with GaN. The latter has been observed for all studied TixAl1−xOy films deposited on GaN. On the other hand, GaxAl1−xOy films show a substantial increase of the band gap from 4.5 eV for Ga2O3 to 5.5 eV for x = 20% Ga and 6.0 eV for x = 5% Ga. A strong suppression of leakage current in associated GaxAl1−xOy-based metal insulator semiconductor capacitors has also been observed, showing promise for device applications.
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