Abstract
We report strong band gap photoluminescence at room temperature in dilute quaternary GaNxAs1−x−yBiy alloys (x<1.6%,y<2.6%) grown by molecular beam epitaxy. The band gap of the alloy can be approximated by the band gap of GaAs minus the reduction in gap associated with the effects of N and Bi alloying individually. A one-parameter method for fitting the composition dependence of the band gaps of dilute quaternary semiconductor alloys is proposed which is in excellent agreement with data for Ga1−yInyNxAs1−x.
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