Abstract
We have studied the effects of expansion of the lattice on band-edge levels in Si, Ge, Sn, and SiSn. The variation in the gap in the Si\ensuremath{\rightarrow}Ge\ensuremath{\rightarrow}Sn series can be explained as moving along a universal curve of the variation of band-edge levels with the combined effect of volume and potential. For all of the materials studied, the gap at low volumes is from \ensuremath{\Gamma} to X. There is a small range of volumes where the gap is from \ensuremath{\Gamma} to L, and at high voulmes the gap is direct until it closes. Thus, in addition to the usual process of applying positive pressure to close the gap, applying negative pressure also causes band overlap and metal- lization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
