Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3

Abstract

The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-type wurtzite GaN is investigated. For a wide range of electron concentrations up to $1.6\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ spectroscopic ellipsometry and photoluminescence were used to determine the dependence of the band gap energy and the Fermi edge on electron density. The band gap renormalization is the dominating effect up to an electron density of about $9\ifmmode\times\else\texttimes\fi{}{10}^{18}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$; at higher values the Burstein-Moss effect is stronger. Exciton screening, the Mott transition, and formation of Mahan excitons are discussed. A quantitative understanding of the near gap transition energies on electron density is obtained. Higher energy features in the dielectric functions up to $10\phantom{\rule{4pt}{0ex}}\mathrm{eV}$ are not influenced by band gap renormalization.