Abstract
A model of energy band-gap narrowing in SI GaAs crystals doped by chromium is proposed in order to explain the higher values of intrinsic carrier densities deduced from galvanomagnetic measurements in some Cr-doped SI GaAs crystals by various authors. This model is based on the screening of electron-hole interaction due to the chromium Cr2⇄Cr3+ state transitions. Also some other possible reasons for band-gap narrowing in SI GaAs are discussed.
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