Abstract
The energy band gap narrowing (BGN) as a function of doping concentration in Be-doped Al 0.33Ga 0.67As is investigated using photoluminescence (PL) measurements on samples grown by molecular beam epitaxy (MBE). An expression for theoretically predicting the band gap narrowing has been deduced for p-type doping in Al xGa 1−xAs (0≤x≤0.45). The experimental results obtained from the PL spectra are in good agreement with this expression. A simple empirical relation for the PL peak energy of Be-doped Al 0.33Ga 0.67As as a function of carrier concentration is also presented. This provides a convenient way of determining the carrier concentration in Be-doped Al 0.33Ga 0.67As samples nondestructively.
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