Abstract
BaTiO3 ceramics doped with double perovskite Sr2KMoO6 (BT-SKM) are fabricated via solid-state reaction technology. The effects of SKM dopants on the structure, band gap and electrical/magnetic properties of BT are systematically studied. XRD and Raman spectra analysis show polycrystalline perovskite structure of the samples, which confirms the structural changes. With the addition of SKM dopants, the grain size of the samples decreases significantly. The band gaps of doped BT samples reduce, and the minimum band gap of BT-SCM is 1.77 eV, which is apparently reduced compared with the band gap of pure BT of 3.22 eV. However, the ferroelectric properties are weakened in samples doped with SKM. This ascribes to the introduction of more oxygen vacancies by dopants, which impedes the switching of domains, resulting in deterioration of ferroelectric properties. Furthermore, ferromagnetism of BT-SNM is observed, which may be attributed to the long-range exchange interaction between Ni2+ ions and oxygen vacancies. These results reveal the potential applications of these perovskite oxides in photovoltaic and memory devices.
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