Abstract
In this work, the spatial resolution of two quantum well intermixing processes has been obtained using spatially resolved photoluminescence. The processes investigated are impurity-free vacancy disordering using SiO2∕SiO2:P caps and sputtered silica induced intermixing. These studies aimed to choose a suitable intermixing technology to realize the band gap gratings for domain disordering quasi-phase-matching in GaAs∕AlGaAs heterostructures. From the photoluminescence studies it was established that the process of impurity-free vacancy disordering using SiO2∕SiO2:P caps has a spatial resolution on the order of 7μm, while the process of sputtered silica induced intermixing has a spatial resolution on the order of 3μm. From these measurements it was demonstrated that the sputtered silica induced intermixing process is more suitable for the fabrication of the gratings needed for quasi-phase-matching in the samples studied here. Successful quasi-phase-matching demonstrated through second harmonic generation at 775nm has been produced in GaAs∕AlAs short superlattice waveguides using sputtered silica induced intermixing through domain disordering quasi-phase-matching. The gratings have shown a duty cycle far from the targeted 1:1 design, which has implications on the conversion efficiency.
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