Band gap formation of 2D materialin graphene: Future prospect and challenges

Abstract

Graphene, a single particle thicker carbon layer with a hexagonal form, was successfully confined, and the potential electrical impact was observed in 2004. Since a surge in study interest has risen, concentrating on its one-of-a-kind semimetallic property ascribing to the intersection of the π and π* groups at the Fermi level at K and K′ focuses in reciprocal space. At energies around the decadence point, these bands are also directly dispersive, resulting in zero-mass quasiparticles (Diracfermions) linked to the equivalence of the two sublattices in the primitive unit cell of graphene. The electron's relativistic nature makes optimal transmission across high potential barriers possible (Klein paradox). As a response, graphene is frequently predicted to be the structural obstruct for future electrical devices. Future semiconductor industries could replace silicon because of its unique electrical and transport capabilities, but it lacks liveliness. For practical applications, the bandgap is a generous limitation. From the earliest starting point, it can be said that halting symmetry may be the most productive methodology to recognize bandgap tenability in graphene. As indicated by uniaxial or in-plane shear strain, the weak cross-section twisting of graphene has led some to believe that most stressed graphene has lost energy below 1eV. The limitations of the present work as well as future research directions were also discussed here. Theoretically, a sizeable band gap of ≥2 eV, tunable bandgap with the desired level, and low contact resistance in metal interfaces are still being explored. Nonetheless, they are less understood. Future studies can be carried out experimentally to resolve the constraints of semiconductors for their applications in a variety of fields.