Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

Abstract

The effect of plasma fluorination on the band gap, 2p core-level energy, and the dielectric behavior of porous silicon (PS) prepared under constant conditions has been examined using Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, photoluminescence, and reflection. It has been found that with increasing extent of fluorination, the band gap expands, and the 2p level and the dielectric constant drop down substantially compared with those of the as-grown PS, being quite similar to the effect of particle size reduction. These findings could be interpreted as the fluorination-induced crystal field enhancement and the valence charge repopulation of silicon. The surface fluorination may provide an effective method for tuning the optical and dielectric properties of nanometric silicon.