Abstract
One-side chemical conjugation of bilayer graphene has limitations not only on opening a band gap of less than 0.2 eV due to a small electric field across bilayer graphene but also on generating highly degenerate semiconducting properties by shifting the Fermi level into either a valence band or a conduction band due to the requirement of heavy doping concentration. Here, we proposed a new strategy of band-gap engineering of bilayer graphene by chemically conjugating double sides of bilayer graphene, one side with an electron-donating group and another side with an electron-withdrawing group. The compensated charges not only created a large band gap of 0.3 eV by invoking an internally strong local dipole field in bilayer graphene but also removed degeneracy by shifting the Fermi level within the band gap. Our approach is easy and straightforward, environmentally stable, and scalable for integration, which is in good contrast with the previous reports of fabricating nanoribbons and high electric field operation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
