Abstract
La aluminate (La2O3)x(Al2O3)1−x films were grown by atomic layer deposition method, for which the conduction band offset, valence band offset, and band gap were obtained by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The valence band offsets were nearly unchanged within the range from 2.23to2.37eV with increasing Al content. The conduction band offsets were changed from 2.40to2.86eV for the above dielectrics. Remarkably, the band gap could be engineered from 5.75to6.35eV by increasing Al content. We also found that La aluminate films have symmetric band profiles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
