Abstract
Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In0.4Ga0.6As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device.
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