Abstract
Recently, Sn perovskite solar cell (Sn PVK PV) are attracting attention. However, the efficiency was still lower than that of Pb perovskite solar cells. Recently, the Sn PVK PVs with efficiency higher than 10% have been reported from several research groups. The crystal defects include the presence of Sn4+, Sn2+ defect, I- defect, the presence of Sn0, the interstitial I- and so on. In order to decrease these defect densities, we have proposed some processes such as addition of Ge2+ ion, introduction of ethylammonium cation into A site, and surface passivation of perovskite grain boundary with diaminoethane dilute solution. Our results on efficiency enhancement (13%) is explained by the conduction and valence band energy level against carrier trap depth. In addition, an inverted SnPb perovskite solar cells with 23.3% efficiency is discussed from the view point of optimization of energy alignment.
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