Band Engineering of Rutile TiO2 by Cobalt Doping in Ru/Rutile-TiO2/Ru Capacitor aiming 40-nm DRAM and Beyond

Abstract

A Feasible fabrication process of Ru/rutile-Co-doped TiO2/Ru capacitor for 40-nm DRAM and beyond is developed. As-deposited Ru lower electrode is found out to crystallize Co-doped TiO2 overlayer into rutile having relative permittivity beyond 90 owing to lattice matching. Furthermore, we predicted doping of element having small ionic radius, such as Co, increase Schottky barrier, leading to decrease in leakage current. Temperature dependence of leakage current of RIR-Co-doped-TiO2 capacitor and band structure analysis with X-ray photoelectron spectroscopy shows that leakage current is determined by balancing between thermionic current and tunneling current through Schottky barrier. By doping of Co, the thermionic current decreases, whereas the tunneling current increases. With calculation using theoretical dependence of amount of doped element on leakage current, optimum percentage of Co is estimated as 0.3-0.6 % to achieve a sufficiently low leakage-current. This technology opens possibility to utilize 40-nm DRAM and beyond.