Abstract
The band edge structure modification of Pb 1- x Ge x Te due to the structural phase transition has been investigated by means of the interband absorption and the Shubnikov-de Haas (SdH) effect. Below the phase transition temperautre ( T c ) the band gap determined by the optical absorption increases with lowering temperatures or at least its temperature coefficient changes. From the SdH effect below T c , we obtained the information of the carrier redistribution among the conduction (or valence) bands caused by the phase transition. These results can be explained only when we take into account the effects of relative sublattice displacement and the homogeneous strain at the same time.
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