Abstract
The fundamental absorption-edge and the X1–X3 absorption band (α1-band) were investigated at 300 K for n-GaP with various doping levels. The correction of the α1-band with the donor-electron-related absorptions can not be neglected for high donor concentrations ND. For increasing ND, the optical gap shrinks as Eg10=2.233-1.39×10-8N1/3D, the X1–X3 threshold energy δ increases and decreases (increases) the effective mass ratio m2*/m1* (the effective mass m1*), where m1* is for the X1-band and m2* for the X3-band. Some discussions are made regarding the apparent increase in m1*. The increase in δ is attributed to a downward shift of the conduction band-edge (X1). Such shift of ∼5 meV evaluated experimentally is close to the shift of 8.8 meV calculated by Mahan's model with increasing ND from 2×1017 to 2×1018 cm-3.
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