Abstract
The excitonic transitions between the ground electron and hole quantum well sublevels in strained In x Ga 1- x As-Al y Ga 1- y As multiple quantum well structures ( x = 0.12−0.35 and y = 0.2−0.35) have been investigated by means of photoluminescence and photoconductivity measurements. The molecular beam epitaxy grown structures contained an Al y Ga 1- y As matrix with one unstrained GaAs and three strained In x Ga 1- x As quantum wells one of which was in the GaAs cladding layers. The ratio of the conduction band edhe line up to the band gap offset for the strained In x Ga 1- x As-unstrained Al y Ga 1- y As interface has been found to be 0.67 ± 0.08 for the studied regions of x and y.
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