Year-end Sale % OFF 
Abstract
A new method is presented for direct and reliable determination of the band edge offset in quantum well (QW) semiconductor heterostructures. It is based on luminescence measurements at various filling levels of the valence and conduction band quantum wells. Magnetoluminescence measurements were made to independently determine the effective masses. The conduction band offset to energy gap ratio for strained InxGa1-xAs QWS in an unstrained GaAs matrix was determined to be 0.79+or-0.05 for x=0.18 and 0.28.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
