Abstract
In this paper, two different materials are studied for silicon band edge work function. Sc metal gate with thin interface TaN x layer is investigated for n-channel metal-oxide semiconductor (NMOS) metal gate application. The control of TaN x layer thickness is necessary to achieve improved thermal stability and work function (WF) as low as 4.0 electron volts (eV). RuO x also has been demonstrated for p-channel metal-oxide semiconductor (PMOS) application. RuO x WF tends to increase in comparison with elemental Ru metal. This may be due to improved thin film properties like better adhesion and roughness for RuO x . Overall both Sc and RuO x are revealed as candidate materials for future CMOS technology.
Published Version
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